Split-Channel Ballistic Transport in an InSb Nanowire

Split-Channel Ballistic Transport in an InSb Nanowire.

We report an experimental study of one-dimensional (1D) electronic transport in an InSb semiconducting nanowire. A total of three bottom gates are used to locally deplete the nanowire, creating a ballistic quantum point contact with only a few conducting channels. In a magnetic field, the Zeeman splitting of the corresponding 1D sub-bands is revealed by the emergence of conductance plateaus at ...

Coherent Charge Transport in Ballistic InSb Nanowire Josephson Junctions.

Hybrid InSb nanowire-superconductor devices are promising for investigating Majorana modes and topological quantum computation in solid-state devices. An experimental realisation of ballistic, phase-coherent superconductor-nanowire hybrid devices is a necessary step towards engineering topological superconducting electronics. Here, we report on a low-temperature transport study of Josephson jun...

Supercurrent through a spin-split quasi-ballistic point contact in an InAs nanowire

One-dimensional electron transport and thermopower in an individual InSb nanowire

We have measured the electrical conductance and thermopower of a single InSb nanowire in the temperature range from 5 to 340 K. Below temperature (T ) 220 K, the conductance (G) shows a power-law dependence on T and the current (I )–voltage (V ) curve follows a power-law dependence on V at large bias voltages. These features are the characteristics of one-dimensional Luttinger liquid (LL) trans...

Ballistic InAs nanowire transistors.

Ballistic transport of electrons at room temperature in top-gated InAs nanowire (NW) transistors is experimentally observed and theoretically examined. From length dependent studies, the low-field mean free path is directly extracted as ~150 nm. The mean free path is found to be independent of temperature due to the dominant role of surface roughness scattering. The mean free path was also theo...